Transistor-less Spin Torque Transfer MRAM design

  • Weike Wang
  • Published 2015 in 2015 IEEE Magnetics Conference (INTERMAG)

Abstract

The magnetic random accessible memory (MRAM) is positioned as one of the potential candidates for future universal memory[1]. Although MRAM's endurance outperforms most of the competing technologies, MRAM has not demonstrated strong advantage on area density [2]. Furthermore, recent rapid progress on area density in competing technologies, such as… (More)

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