Transistor Switches Using Active Piezoelectric Gate Barriers

@article{Jana2015TransistorSU,
  title={Transistor Switches Using Active Piezoelectric Gate Barriers},
  author={Raj K. Jana and Arvind Ajoy and Gregory L. Snider and Debdeep Jena},
  journal={IEEE Journal on Exploratory Solid-State Computational Devices and Circuits},
  year={2015},
  volume={1},
  pages={35-42}
}
  • R. Jana, A. Ajoy, +1 author D. Jena
  • Published 2 May 2015
  • Physics
  • IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
This paper explores the consequences of introducing a piezoelectric gate barrier in a normal field-effect transistor. Because of the positive feedback of strain and piezoelectric charge, internal charge amplification occurs in such an electromechanical capacitor resulting in a negative capacitance. The first consequence of this amplification is a boost in the ON-current of the transistor. As a second consequence, employing the Lagrangian method, we find that using the negative capacitance of a… 

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