Transistor Concepts Based on Lateral Heterostructures of Metallic and Semiconducting Phases of MoS2

@article{Marian2017TransistorCB,
  title={Transistor Concepts Based on Lateral Heterostructures of Metallic and Semiconducting Phases of MoS2},
  author={Damiano Marian and Elias Dib and Teresa Cusati and Enrique Gonz{\'a}lez Mar{\'i}n and Alessandro Fortunelli and Giuseppe Iannaccone and Gianluca Fiori},
  journal={Physical review applied},
  year={2017},
  volume={8},
  pages={054047}
}
In this paper we propose two transistor concepts based on lateral heterostructures of monolayer MoS$_2$, composed of adjacent regions of 1T (metallic) and 2H (semiconducting) phases, inspired by recent research showing the possibility to obtain such heterostructures by electron beam irradiation. The first concept, the lateral heterostructure field-effect transistor, exhibits potential of better performance with respect to the foreseen evolution of CMOS technology, both for high performance and… Expand

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