Transient simulation of nano-scale UTBB nmosfets by deterministically solving BTE

Abstract

The transient response to the drain voltage of a nano scale Ultra-Thin Body and BOX (UTBB) nMOSFET are investigated by deterministically solving the time dependent Boltzmann Transport Equation (BTE). The relaxation process of subbands profile, electron density and current is investigated. The relaxation time of the device is about 0.1ps at typical biases… (More)

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