Transient plasma-induced emission analysis of laser-desorbed species during Cl 2 plasma etching of Si

@inproceedings{Choe2000TransientPE,
  title={Transient plasma-induced emission analysis of laser-desorbed species during Cl 2 plasma etching of Si},
  author={Jae Young Choe and N. C. M. Fuller and Vincent M. Donnelly and Irving P. Hermana},
  year={2000}
}
The surface during the etching of Si in a Cl 2 inductively-coupled plasma~ICP! was analyzed by laser desorption~LD!, followed by detection of the desorbed species by monitoring the transient changes by plasma-induced emission ~PIE!. Optical emission from Si, SiCl, SiCl 2, and possibly other species was detected in situusing this LD-PIE method as a function… CONTINUE READING