Transient electronic transport in InP under the condition of high-energy electron injection

@article{Brennan1983TransientET,
  title={Transient electronic transport in InP under the condition of high-energy electron injection},
  author={K A Brennan and Karl Hess and J. Tang and G. J. Iafrate},
  journal={IEEE Transactions on Electron Devices},
  year={1983},
  volume={30},
  pages={1750-1754}
}
Transient transport of electrons in InP is studied under the condition of high-energy electron injection. This study makes use of a Monte Carlo simulation with the unique inclusion of realistic band-structure as derived from an empirical pseudopotential method. The results obtained herein for InP are qualitatively similar to those previously obtained by the… CONTINUE READING