Transient charge-based model for SiGe HBTs

Abstract

A compact model for silicon germanium heterojunction bipolar transistor based on transient integral charge-control (TICC) relations is presented. Partitioning factors are extracted from the numerically simulated data. A thorough analysis based on the transient and AC results has been carried out for checking the suitability of the model. No convergence… (More)

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