Transient Analysis of an Extended Drift Region in a 6H-SiC Diode Formed by a Single Alpha Particle Strike and Its Contribution to the Increased Charge Collection

Abstract

Charge collection of a 6H-SiC p+ n diode has been studied. The collected charges of the diode are measured using a single alpha particle strike at various reverse bias voltages, then analyzed using both the low-injection charge collection model and the DESSIS device simulator. It is found that the total collected charges at lower bias voltages cannot be… (More)

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