Transfer-printing-based integration of a III-V-on-silicon distributed feedback laser.

  title={Transfer-printing-based integration of a III-V-on-silicon distributed feedback laser.},
  author={Jing Zhang and Bahawal Haq and James O'callaghan and Angieska Gocalinska and Emanuele Pelucchi and Antonio Jose Trindade and Brian Corbett and Geert Morthier and Gunther Roelkens},
  journal={Optics express},
  volume={26 7},
An electrically pumped DFB laser integrated on and coupled to a silicon waveguide circuit is demonstrated by transfer printing a 40 × 970 μm2 III-V coupon, defined on a III-V epitaxial wafer. A second-order grating defined in the silicon device layer with a period of 477 nm and a duty cycle of 75% was used for realizing single mode emission, while an adiabatic taper structure is used for coupling to the silicon waveguide layer. 18 mA threshold current and a maximum single-sided waveguide… 

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