Towards peptide-based tunable multistate memristive materials.

  title={Towards peptide-based tunable multistate memristive materials.},
  author={Salvador Cardona-Serra and Lorena E Rosaleny and Silvia Gim{\'e}nez-Santamarina and Luis Mart{\'i}nez-Gil and A. Gaita-Ari{\~n}o},
  journal={Physical chemistry chemical physics : PCCP},
Development of new memristive hardware is a technological requirement towards widespread neuromorphic computing. Molecular spintronics seems to be a fertile field for the design and preparation of this hardware. Within molecular spintronics, recent results on metallopeptides demonstrating the interaction between paramagnetic ions and the chirality induced spin selectivity effect hold particular promise for developing fast (ns-μs) operation times. [R. Torres-Cavanillas et al., J. Am. Chem. Soc… 


Single Nanoparticle Magnetic Spin Memristor.
Using the CISS effect, the active memory device is miniaturized for the first time from the micrometer scale to 30 nm in size, and this device presents memristor-like nonlinear logic operation at low voltages under ambient conditions and room temperature.
Ultrafast Synaptic Events in a Chalcogenide Memristor
The intrinsic memristance of stoichiometric crystalline Ge2Sb2Te5 that originates from the charge trapping and releasing by the defects is revealed and provides new opportunities for building ultrafast neuromorphic computing systems and surpassing Von Neumann architecture.
A ferroelectric memristor.
It is demonstrated that voltage-controlled domain configurations in ferroelectric tunnel barriers yield memristive behaviour with resistance variations exceeding two orders of magnitude and a 10 ns operation speed.
Reinforced room temperature spin filtering in chiral paramagnetic metallopeptides.
These findings permit the inclusion of magnetic biomolecules in the CISS field, paving the way to their implementation in a new generation of (bio)spintronic nanodevices.
Memristor crossbar arrays with 6-nm half-pitch and 2-nm critical dimension
A nanofin structure enables a working memristor array with 2-nm feature size and 4.5-Tbit per square inch packing density, comparable to the information density achieved in state-of-the-art 64-layer and multilevel 3D-NAND flash memory.
The missing memristor found
It is shown, using a simple analytical example, that memristance arises naturally in nanoscale systems in which solid-state electronic and ionic transport are coupled under an external bias voltage.
Enhanced Magnetoresistance in Chiral Molecular Junctions.
It is found that the α-helix conformation displays a spin polarization, calculated through the intrinsic magneto-resistance of the junction, about 100-1000 times larger than the linear β-strand, clearly demonstrating the crucial role played by the molecular helical geometry on the enhancement of spin polarization associated with the CISS effect.
Metal-Controlled Magnetoresistance at Room Temperature in Single-Molecule Devices.
The strong magnetoresistance effect found in this kind of single-molecule wire opens a new approach for the design of room-temperature nanoscale devices based on spin-polarized currents controlled at molecular level.
Large Conductance Switching in a Single-Molecule Device through Room Temperature Spin-Dependent Transport.
A single-molecule wire is presented that displays large conductance switching by controlling the spin-dependent transport under ambient conditions (room temperature in a liquid cell) and opens up a new door for the design and control of spin-polarized transport in nanoscale molecular devices at room temperature.
Neuromorphic computing with nanoscale spintronic oscillators
It is shown experimentally that a nanoscale spintronic oscillator can be used to achieve spoken-digit recognition with an accuracy similar to that of state-of-the-art neural networks and the regime of magnetization dynamics that leads to the greatest performance is determined.