Towards an analytical model of NAND flash memory and the impact on channel decoding

@article{Yassine2016TowardsAA,
  title={Towards an analytical model of NAND flash memory and the impact on channel decoding},
  author={Hachem Yassine and Justin P. Coon and Mohamed Ismail and Henry Fletcher},
  journal={2016 IEEE International Conference on Communications (ICC)},
  year={2016},
  pages={1-6}
}
The underlying models of sources of noise in flash memory are exploited to compute an accurate distribution of the threshold voltage of a cell after cancelling cell to cell interference (CCI). We analytically express the mean and variance of this voltage solely as a function of number of P/E cycles, retention time and data eliminating the read overhead of the adaptive estimation methods. To reduce the computational difficulty in hardware, we approximate the accurate distribution by a moment… CONTINUE READING