Towards amplifier design with a SiC graphene field-effect transistor

@article{AguirreMorales2015TowardsAD,
  title={Towards amplifier design with a SiC graphene field-effect transistor},
  author={Jorge-Daniel Aguirre-Morales and S{\'e}bastien Fr{\'e}gon{\`e}se and Anurag Dhar Dwivedi and Thomas Zimmer and Mohamed Salah Khenissa and Mohamed Moez Belhaj and Henri Happy},
  journal={EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon},
  year={2015},
  pages={93-96}
}
A power amplifier is implemented using a SiC Graphene Field-Effect Transistor. The amplifier gain is enhanced using an input matching LC circuit, which is connected to the GFET through standard RF probes. Experimental measurements and ADS-simulation based on developed models are used for the evaluation of the performances of the SiC GFET-based amplifier. It has been shown that a power gain of 4.8 dB can be achieved at 2.4 GHz using the GFET and the matching circuit assembly. Technology… CONTINUE READING

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