Towards a 120 GHz SiGe LNA for millimeter-wave imaging

@article{Shumakher2011TowardsA1,
  title={Towards a 120 GHz SiGe LNA for millimeter-wave imaging},
  author={Evgeny Shumakher and Danny Elad},
  journal={2011 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems (COMCAS 2011)},
  year={2011},
  pages={1-4}
}
Imaging in the millimeter-wave range promises significant benefits for safety and security. The low THz range is being rapidly unraveled by various silicon technologies. The following work presents the progress on design and characterization of an amplifier operating in the 120 GHz frequency range, realized in IBM's standard 0.12-um SiGe BiCMOS technology… CONTINUE READING