Towards 3 nm overlay and critical dimension uniformity : an integrated error budget for double patterning lithography

@inproceedings{Arnold2008Towards3N,
  title={Towards 3 nm overlay and critical dimension uniformity : an integrated error budget for double patterning lithography},
  author={William H Arnold and ASML},
  year={2008}
}
Double patterning has emerged as the likely lithography technology to bridge the gap between water-based ArF immersion lithography and EUV. The adoption of double patterning is driven by the accelerated timing of the introduction of device shrinks below 40nm half pitch, especially for NAND flash. With scaling, increased device sensitivity to parameter variations puts extreme pressure on controlling overlay and critical dimension uniformity. Double patterning also makes unique demands on overlay… CONTINUE READING

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