Toward the ultimate limit of phase change in Ge(2)Sb(2)Te(5).

  title={Toward the ultimate limit of phase change in Ge(2)Sb(2)Te(5).},
  author={R. Simpson and M. Krbal and P. Fons and A. Kolobov and J. Tominaga and T. Uruga and H. Tanida},
  journal={Nano letters},
  volume={10 2},
  • R. Simpson, M. Krbal, +4 authors H. Tanida
  • Published 2010
  • Medicine, Materials Science
  • Nano letters
  • The limit to which the phase change memory material Ge(2)Sb(2)Te(5) can be scaled toward the smallest possible memory cell is investigated using structural and optical methodologies. The encapsulation material surrounding the Ge(2)Sb(2)Te(5) has an increasingly dominant effect on the material's ability to change phase, and a profound increase in the crystallization temperature is observed when the Ge(2)Sb(2)Te(5) layer is less than 6 nm thick. We have found that the increased crystallization… CONTINUE READING
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