Toward the ultimate limit of phase change in Ge(2)Sb(2)Te(5).

  title={Toward the ultimate limit of phase change in Ge(2)Sb(2)Te(5).},
  author={Robert E. Simpson and Milo{\vs} Krbal and Paul Fons and Alexander V. Kolobov and Junji Tominaga and Tomoya Uruga and Hajime Tanida},
  journal={Nano letters},
  volume={10 2},
The limit to which the phase change memory material Ge(2)Sb(2)Te(5) can be scaled toward the smallest possible memory cell is investigated using structural and optical methodologies. The encapsulation material surrounding the Ge(2)Sb(2)Te(5) has an increasingly dominant effect on the material's ability to change phase, and a profound increase in the crystallization temperature is observed when the Ge(2)Sb(2)Te(5) layer is less than 6 nm thick. We have found that the increased crystallization… Expand
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Scaling analysis of phase-change memory technology
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Non - Cryst
  • Nucleation and Growth of Films
  • 2005