Toward a Universal Memory
@article{kerman2005TowardAU, title={Toward a Universal Memory}, author={Johan {\AA}kerman}, journal={Science}, year={2005}, volume={308}, pages={508 - 510} }
Today9s electronic gadgets, such as digital cameras and mp3 players, often contain three different types of memory, because none of these memory types-static random access memory, dynamic random access memory, and Flash-can fulfill all memory requirements of these devices. In his Perspective,
A…kerman
discusses magnetoresistive random access memory (MRAM), a promising candidate for a "universal memory" that combines all the strengths and none of the weaknesses of the existing memory types…
420 Citations
Non-Volatile Memory : Emerging Technologies And Their Impacts on Memory Systems
- Computer Science
- 2010
The introduction of these new memory technologies will probably result in more complex memory hierarchies, but is likely to allow the construction of memory chips that are non-volatile, low-energy and have density and latency close to or better than current DRAM chips, improving performance/eiency and allowing memory systems to continue to scale up.
Evaluation of system-level impacts of a persistent main memory architecture
- Computer Science
- 2012
This work assesses system-level latency and energy impacts of a computer with persistent main memory using PCRAM and Memristor and concludes that in order to reap the major rewards potentially offered by persistence main memory, it is necessary to take new programming approaches that do not separate volatile memory from persistent secondary storage.
Nonvolatile Multi-States Memories for High-Density Data Storage.
- Computer ScienceACS applied materials & interfaces
- 2020
An in-depth perspective is presented on the recent progress and challenges on the device architectures, material innovation, working mechanisms, and properties and performance of various types of nonvolatile multi-state memory, including flash, magnetic random-access memory (MRAM), resistive random- Access memory (RRAM), ferroelectric random- access memory (FeRAM), and phase-change memory (PCM).
Transistor-less Spin Torque Transfer MRAM design
- Computer Science2015 IEEE Magnetics Conference (INTERMAG)
- 2015
The magnetic random accessible memory (MRAM) is positioned as one of the potential candidates for future universal memory[1]. Although MRAM's endurance outperforms most of the competing technologies,…
Memory Intensive Computing
- Computer Science
- 2014
This presentation presents the multistate pipeline register (MPR), a structure that stores the microarchitectural state of multiple threads, and shows that MPR can eliminate the need to flush the pipeline upon a thread switch in Switch-on-Event (SoE) multi-threading machines.
Memory Architecture for Integrating Emerging Memory Technologies
- Computer Science2011 International Conference on Parallel Architectures and Compilation Techniques
- 2011
The prototype and evaluation demonstrate that it is possible to integrate diverse memory technologies into a single memory architecture with virtually no loss of overall performance.
Multilayer Nanomagnetic Systems for Information Processing
- Computer Science
- 2014
The present work utilizes the majority gate architecture, which uses the magneto-static interaction between the freelayers of the multilayer nanomagnets, to perform computation, and demonstrates the study of dipolar interaction between nanomagnetic disks.
Non-volatile memory based on the ferroelectric photovoltaic effect
- Materials ScienceNature communications
- 2013
It is demonstrated that the significant photovoltaic effect of a ferroelectric material, such as BiFeO3 with a band gap in the visible range, can be used to sense the polarization direction non-destructively in aFerroelectric memory.
References
SHOWING 1-5 OF 5 REFERENCES
A 4-Mb toggle MRAM based on a novel bit and switching method
- EngineeringIEEE Transactions on Magnetics
- 2005
A 4-Mb magnetoresistive random access memory (MRAM) with a novel magnetic bit cell and toggle switching mode is presented. The circuit was designed in a five level metal, 0.18-mum complementary…
Demonstrated reliability of 4-mb MRAM
- EngineeringIEEE Transactions on Device and Materials Reliability
- 2004
The successful commercialization of MRAM will rely on providing customers with a robust and reliable memory product. The intrinsic reliability of magnetoresistive tunnel junction (MTJ) memory bits…
Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions
- PhysicsNature materials
- 2004
A giant MR ratio up to 180% at room temperature in single-crystal Fe/MgO/Fe MTJs is reported, indicating that coherency of wave functions is conserved across the tunnel barrier.
Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers
- PhysicsNature materials
- 2004
Sputter-deposited polycrystalline MTJs grown on an amorphous underlayer, but with highly oriented MgO tunnel barriers and CoFe electrodes, exhibit TMR values of up to ∼220% at room temperature and ∼300% at low temperatures, which will accelerate the development of new families of spintronic devices.
Current-driven magnetization reversal and spin-wave excitations in Co /Cu /Co pillars
- PhysicsPhysical review letters
- 2000
Using thin film pillars approximately 100 nm in diameter, containing two Co layers of different thicknesses separated by a Cu spacer, we examine the process by which the scattering from the…