Toward Nanowire Electronics

@article{Appenzeller2008TowardNE,
  title={Toward Nanowire Electronics},
  author={J. Appenzeller and J. Knoch and M. Bjork and H. Riel and H. Schmid and W. Riess},
  journal={IEEE Transactions on Electron Devices},
  year={2008},
  volume={55},
  pages={2827-2845}
}
This paper discusses the electronic transport properties of nanowire field-effect transistors (NW-FETs). Four different device concepts are studied in detail: Schottky-barrier NW-FETs with metallic source and drain contacts, conventional-type NW-FETs with doped NW segments as source and drain electrodes, and, finally, two new concepts that enable steep turn-on characteristics, namely, NW impact ionization FETs and tunnel NW-FETs. As it turns out, NW-FETs are, to a large extent, determined by… Expand
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