Toward Low-Temperature Solid-Source Synthesis of Monolayer MoS2.

@article{Tang2021TowardLS,
  title={Toward Low-Temperature Solid-Source Synthesis of Monolayer MoS2.},
  author={Alvin Tang and Aravindh Kumar and Marc Jaikissoon and Krishna C. Saraswat and H S Philip Wong and Eric Pop},
  journal={ACS applied materials \& interfaces},
  year={2021}
}
Two-dimensional (2D) semiconductors have been proposed for heterogeneous integration with existing silicon technology; however, their chemical vapor deposition (CVD) growth temperatures are often too high. Here, we demonstrate direct CVD solid-source precursor synthesis of continuous monolayer (1L) MoS2 films at 560 °C in 50 min, within the 450-to-600 °C, 2 h thermal budget window required for back-end-of-the-line compatibility with modern silicon technology. Transistor measurements reveal on… 

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