Toward Low-Temperature Solid-Source Synthesis of Monolayer MoS2.

  title={Toward Low-Temperature Solid-Source Synthesis of Monolayer MoS2.},
  author={Alvin Tang and Aravindh Kumar and Marc Jaikissoon and Krishna C. Saraswat and H S Philip Wong and Eric Pop},
  journal={ACS applied materials \& interfaces},
Two-dimensional (2D) semiconductors have been proposed for heterogeneous integration with existing silicon technology; however, their chemical vapor deposition (CVD) growth temperatures are often too high. Here, we demonstrate direct CVD solid-source precursor synthesis of continuous monolayer (1L) MoS2 films at 560 °C in 50 min, within the 450-to-600 °C, 2 h thermal budget window required for back-end-of-the-line compatibility with modern silicon technology. Transistor measurements reveal on… 

Figures from this paper

Low temperature CVD growth of WSe2 enabled by moisture-assisted defects in the precursor powder

Two-dimensional transition metal dichalcogenides (TMDs) have been proposed for a wide variety of applications, such as neuromorphic computing, flexible field effect transistors, photonics, and solar

Extended Scale Length Theory for Low-Dimensional Field-Effect Transistors

Low-dimensional (low-D) semiconductors such as carbon nanotubes (CNTs) and 2-D materials are promising channel materials for nanoscale field-effect transistors (FETs) due to their superior

Application of Two-Dimensional Materials towards CMOS-Integrated Gas Sensors

During the last few decades, the microelectronics industry has actively been investigating the potential for the functional integration of semiconductor-based devices beyond digital logic and memory,



Wafer-scale production of highly uniform two-dimensional MoS2 by metal-organic chemical vapor deposition

This work presents the direct growth of a MoS2 monolayer with unprecedented spatial and structural uniformity across an entire 8 inch SiO2/Si wafer, demonstrating the potential for reliable wafer-scale production of 2D MoS 2 for practical applications in next-generation electronic and optical devices.

High Current Density in Monolayer MoS2 Doped by AlOx.

It is shown that low-temperature substoichiometric AlOx provides a stable n-doping layer for monolayer MoS2, compatible with circuit integration, and approaches several low-power transistor metrics required by the international technology roadmap.

A novel 2-step ALD route to ultra-thin MoS2 films on SiO2 through a surface organometallic intermediate.

The lack of scalable-methods for the growth of 2D MoS2 crystals, an identified emerging material with applications ranging from electronics to energy storage, is a current bottleneck against its

High-Field Transport and Velocity Saturation in Synthetic Monolayer MoS2.

High-field transport as a function of temperature for the first time in high-quality synthetic monolayer MoS2 is measured, finding that in typical device geometries (e.g. on SiO2 substrates) self-heating can significantly reduce current drive during high-field operation.

Growth-substrate induced performance degradation in chemically synthesized monolayer MoS2 field effect transistors

We report on the electronic transport properties of single-layer thick chemical vapor deposition (CVD) grown molybdenum disulfide (MoS2) field-effect transistors (FETs) on Si/SiO2 substrates. MoS2

Intrinsic electrical transport and performance projections of synthetic monolayer MoS2 devices

We demonstrate monolayer (1L) MoS2 grown by chemical vapor deposition (CVD) with transport properties comparable to those of the best exfoliated 1L devices over a wide range of carrier densities (up

Low Variability in Synthetic Monolayer MoS2 Devices.

The variability of hundreds of transistors from monolayer MoS2 synthesized by chemical vapor deposition is examined to address key missing steps required to scale 2D semiconductors into functional systems.

Low-Temperature Atomic Layer Deposition of MoS2 Films.

It is reported that Mo(NMe2 )4 enables MoS2 film growth at record low temperatures-as low as 60 °C, which is compatible with photolithographic and lift-off patterning for the straightforward fabrication of diverse device structures.

Uncovering the Effects of Metal Contacts on Monolayer MoS2.

A comprehensive study of contact interfaces between seven metals and monolayer MoS2 grown by chemical vapor deposition finds that 4) thin metals do not significantly strain MoS 2, as confirmed by X-ray diffraction.

Scalable growth of high-quality polycrystalline MoS(2) monolayers on SiO(2) with tunable grain sizes.

This work provides a route toward scaled-up synthesis of high-quality monolayer MoS2 for electronic and optoelectronic devices and shows a field mobility comparable to those achieved from exfoliatedMoS2.