• DOI:10.1021/acsami.1c06812
• Corpus ID: 237280032

Toward Low-Temperature Solid-Source Synthesis of Monolayer MoS2.

@article{Tang2021TowardLS,
  title={Toward Low-Temperature Solid-Source Synthesis of Monolayer MoS2.},
  author={Alvin Tang and Aravindh Kumar and Marc Jaikissoon and Krishna C. Saraswat and H S Philip Wong and Eric Pop},
  journal={ACS applied materials \& interfaces},
  year={2021}
}

• A. Tang, Aravindh Kumar, +3 authors E. Pop
• Published 24 August 2021
• Materials Science
• ACS applied materials & interfaces

Two-dimensional (2D) semiconductors have been proposed for heterogeneous integration with existing silicon technology; however, their chemical vapor deposition (CVD) growth temperatures are often too high. Here, we demonstrate direct CVD solid-source precursor synthesis of continuous monolayer (1L) MoS2 films at 560 °C in 50 min, within the 450-to-600 °C, 2 h thermal budget window required for back-end-of-the-line compatibility with modern silicon technology. Transistor measurements reveal on-state current up to ∼140 μA/μm at 1 V drain-to-source voltage for 100 nm channel lengths, the highest reported to date for 1L MoS2 grown below 600 °C using solid-source precursors. The effective mobility from transfer length method test structures is 29 ± 5 cm2 V-1 s-1 at 6.1 × 1012 cm-2 electron density, which is comparable to mobilities reported from films grown at higher temperatures. The results of this work provide a path toward the realization of high-quality, thermal-budget-compatible 2D semiconductors for heterogeneous integration with silicon manufacturing.