Toward 300 mm wafer-scalable high-performance polycrystalline chemical vapor deposited graphene transistors.

@article{Rahimi2014Toward3M,
  title={Toward 300 mm wafer-scalable high-performance polycrystalline chemical vapor deposited graphene transistors.},
  author={Somayyeh Rahimi and Li Tao and Sk. Fahad Chowdhury and Saungeun Park and Alexandre Jouvray and S. Buttress and Nalin L. Rupesinghe and Kenneth B. K. Teo and Deji Akinwande},
  journal={ACS nano},
  year={2014},
  volume={8 10},
  pages={
          10471-9
        }
}
The largest applications of high-performance graphene will likely be realized when combined with ubiquitous Si very large scale integrated (VLSI) technology, affording a new portfolio of "back end of the line" devices including graphene radio frequency transistors, heat and transparent conductors, interconnects, mechanical actuators, sensors, and optical devices. To this end, we investigate the scalable growth of polycrystalline graphene through chemical vapor deposition (CVD) and its… 

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