Total ionizing dose sensitivity of a radiation-tolerant phase-locked loop in a 130 nm SOI technology

Abstract

This paper characterizes the sensitivity of total ionizing dose (TID) response on a radiation-tolerant phase-locked loop (PLL) fabricated in a 130 nm PD-SOI process. Based on the study of device parameter degradation induced by ionizing radiation, the performance attenuation of PLL circuit has been presented. Experimental results show that integrated phase… (More)

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