Total-Ionizing-Dose Radiation Effects in AlGaN/GaN HEMTs and MOS-HEMTs

@article{Sun2013TotalIonizingDoseRE,
  title={Total-Ionizing-Dose Radiation Effects in AlGaN/GaN HEMTs and MOS-HEMTs},
  author={Xiao Sun and Omair I. Saadat and Jin Chen and En Xia Zhang and Sharon Cui and Tom{\'a}s Palacios and Daniel M. Fleetwood and Tso-Ping Ma},
  journal={IEEE Transactions on Nuclear Science},
  year={2013},
  volume={60},
  pages={4074-4079}
}
We have investigated the total ionizing dose (TID) radiation effects in AlGaN/GaN MOS-HEMTs as a function of dose and radiation bias, and compared them with conventional HEMTs. Under 10 keV X-ray irradiation, two distinct regimes of threshold voltage (V<sub>th</sub>) shifts have been revealed: a rapid V<sub>th</sub> shift at low doses for both HEMTs and MOS-HEMTs, and an additional V<sub>th</sub> shift only found in MOS-HEMTs for doses up to at least 2 Mrad (SiO<sub>2</sub>). The rapid V<sub>th… CONTINUE READING