Total Ionizing Dose (TID) Effects on $\hbox{TaO}_{x}$ -Based Resistance Change Memory

@article{Zhang2011TotalID,
  title={Total Ionizing Dose (TID) Effects on \$\hbox\{TaO\}_\{x\}\$ -Based Resistance Change Memory},
  author={Lijie Zhang and R. C. Huang and Dejin Gao and Pan Yue and Poren Tang and Fei Tan and Yimao Cai and Yangyuan Wang},
  journal={IEEE Transactions on Electron Devices},
  year={2011},
  volume={58},
  pages={2800-2804}
}
In this brief, the total ionizing dose (TID) effects of γ rays generated from a 60Co source on the TaOx-based resistive switching memory (resistive random-access memory, RRAM) is investigated. The low-resistance state (LRS) of the RRAM is immune to TID effects, whereas the sensitivity of the high-resistance state (HRS) of RRAM to TID effects depends on the dimensions of the device, including the thickness of the oxide film and the area of the device. The HRS of the device with large area and… CONTINUE READING
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