Total Dose Radiation Response of NROM-Style SOI Non-Volatile Memory Elements

@article{Draper2008TotalDR,
  title={Total Dose Radiation Response of NROM-Style SOI Non-Volatile Memory Elements},
  author={B. L. Draper and R. Dockerty and M. R. Shaneyfelt and S D Habermehl and J. Murray},
  journal={IEEE Transactions on Nuclear Science},
  year={2008},
  volume={55},
  pages={3202-3205}
}
For the first time, NROM-style nonvolatile memory elements were fabricated in SOI and irradiated. Total dose characterizations of these transistors indicate that this new style of memory can be functional to at least 500 krad (SiO2). 

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