Top-down fabricated tapered GaAs nanowires with sacrificial etching of the mask.

Abstract

A novel fabrication method using controlled sacrificial etching of the mask is utilized to fabricate tapered vertical GaAs nanowire arrays. Experimental measurements of the absorption characteristics show that the tapered nanowires absorb over a broadband range as compared to cylindrical ones. The broadband characterization is verified by using optical… (More)
DOI: 10.1088/1361-6528/aa6fe9

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Cite this paper

@article{Dhindsa2017TopdownFT, title={Top-down fabricated tapered GaAs nanowires with sacrificial etching of the mask.}, author={Navneet Dhindsa and Simarjeet Singh Saini}, journal={Nanotechnology}, year={2017}, volume={28 23}, pages={235301} }