Top–Down Fabrication of Gate-All-Around Vertically Stacked Silicon Nanowire FETs With Controllable Polarity

Abstract

As the current MOSFET scaling trend is facing strong limitations, technologies exploiting novel degrees of freedom at physical and architecture level are promising candidates to enable the continuation of Moore's predictions. In this paper, we report on the fabrication of novel ambipolar Silicon nanowire (SiNW) Schottky-barrier (SB) FET transistors… (More)

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Cite this paper

@article{Marchi2014Topx2013DownFO, title={Top–Down Fabrication of Gate-All-Around Vertically Stacked Silicon Nanowire FETs With Controllable Polarity}, author={Michele De Marchi and Davide Sacchetto and Jian Zhang and Stefano Frache and Pierre-Emmanuel Gaillardon and Yusuf Leblebici and Giovanni De Micheli}, journal={IEEE Transactions on Nanotechnology}, year={2014}, volume={13}, pages={1029-1038} }