Tin Diffusion from Doped Oxides for Fabricating GaAs Microwave Devices : B-2: GaAs FET/LED AND DETECTOR

@inproceedings{Arnold1979TinDF,
  title={Tin Diffusion from Doped Oxides for Fabricating GaAs Microwave Devices : B-2: GaAs FET/LED AND DETECTOR},
  author={Norbert Dr Arnold and Heinrich Daembkes and Klaus Heime},
  year={1979}
}
Doped oxides have been used as solid diffusion sources and surface protection layers for diffusion into Cr-doped GaAs. Surface passivation during diffusion at 900°C for 45 min is good and nearly undamaged surfaces have been obtained. The carrier concentration profiles of such diffusions, determined by C-V-measurements, show a steep decrease at about 0.16 µm depth from the surface and can be explained by a concentration dependent diffusion coefficient. 1.3 µm gate length MESFETs produced from… CONTINUE READING