Time-domain Monte Carlo simulations of resonant-circuit operation of GaN Gunn diodes

Abstract

The time-domain operation of GaAs, InP and GaN vertical n+n-nn+ Gunn diodes and GaN planar self-switching diodes (SSDs) is numerically investigated by using the Monte Carlo (MC) technique. To this end, the MC simulation of the intrinsic devices is coupled with the consistent solution of a parallel RLC resonant circuit connected in series. We show that… (More)

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