Time dependent dielectric breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics on AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETs

@article{Wu2015TimeDD,
  title={Time dependent dielectric breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics on AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETs},
  author={Tian-Li Wu and Denis Marcon and Brice De Jaeger and Marleen Van Hove and Benoit Bakeroot and Steve Stoffels and Guido Groeseneken and Stefaan Decoutere and Robin Roelofs},
  journal={2015 IEEE International Reliability Physics Symposium},
  year={2015},
  pages={6C.4.1-6C.4.6}
}
This paper reports a comprehensive time dependent dielectric breakdown (TDDB) evaluation of recessed-gate devices with five different AlGaN barrier thicknesses with characteristics ranging from a D-mode MIS-HEMT to an E-mode MIS-FET. First, the fitted parameter β (the slope of the Weibull distribution) was smaller for a deeper recessed gate and larger for a thicker gate dielectric. Secondly, the extrapolated VG (criterium of 0.01% failures after 20 years) for the devices with Wg (gate width… CONTINUE READING
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