Time-delay-and-integration charge-coupled devices using tin oxide gate technology

Abstract

A time-delay-and-integration (TDI) CCD area array organized into two sections of 10 by 9 integration stages has been designed, built, and tested. The device uses four-phase buried channel construction and provides 65-percent quantum efficiency with smooth spectral response by front surface imaging through transparent doped tin oxide gates. TDI operation… (More)

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