Time and cost reduction for 45° notch oriented 〈100〉 silicon substrate sample prepation

Abstract

Common method for sample preparation on 45deg notch oriented <100> silicon substrate requires cleaving followed by polishing technique. To prevent surface damage during polishing, top layer capping using epoxy cover-glass is required. A faster technique named as dasiaSupermanpsila method involves only cleaving has been proposed. 

Topics

10 Figures and Tables