Time-Resolved Micro-Beam X-Ray Absorption Fine Structure (XAFS) Measurement to Investigate the Cause of a Current Collapse of GaN-HEMTs

The purpose of our work was to carry out a direct measurement of a GaN's surface condition under a voltage stress, and to identify a cause of a current collapse. Using pulsed S-parameters measurements immediately after the voltage stress was applied for the GaN HEMT, equivalent circuit parameters were extracted, and we estimated the virtual gate length… CONTINUE READING