Time Dependent Vccmin Degradation of SRAM Fabricated with High-k Gate Dielectrics

@article{Lin2007TimeDV,
  title={Time Dependent Vccmin Degradation of SRAM Fabricated with High-k Gate Dielectrics},
  author={J. C. Lin and A. S. Oates and C. H. Yu},
  journal={2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual},
  year={2007},
  pages={439-444}
}
The paper presents the results of simulations of voltage-induced V ccmin drift of SRAMs fabricated with high-k gate dielectrics. The authors show that high-k based SRAMs are fundamentally more susceptible to Vccmin stability problems because PMOS NBTI and NMOS PBTI lead to an additive degradation in the bit-cell read voltage. Given the differing time dependences of the NBTI and PBTI phenomena, the drift of Vccmin is enhanced at much earlier times compared to SRAMs that have SiO2 gate dielectric… CONTINUE READING
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