TiO2-based memristors and ReRAM: materials, mechanisms and models (a review)

  title={TiO2-based memristors and ReRAM: materials, mechanisms and models (a review)},
  author={Ella M. Gale},
  journal={Semiconductor Science and Technology},
  • E. Gale
  • Published 1 October 2014
  • Chemistry
  • Semiconductor Science and Technology
The memristor is the fundamental nonlinear circuit element, with uses in computing and computer memory. Resistive Random Access Memory (ReRAM) is a resistive switching memory proposed as a non-volatile memory. In this review we shall summarize the state of the art for these closely-related fields, concentrating on titanium dioxide, the well-utilized and archetypal material for both. We shall cover material properties, switching mechanisms and models to demonstrate what ReRAM and memristor… 
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