TiO$_2$-based Memristors and ReRAM: Materials, Mechanisms and Models (a Review)

@article{Gale2016TiO\_2basedMA,
  title={TiO\$\_2\$-based Memristors and ReRAM: Materials, Mechanisms and Models (a Review)},
  author={Ella M. Gale},
  journal={ArXiv},
  year={2016},
  volume={abs/1611.04456}
}
  • E. Gale
  • Published 2016
  • Computer Science, Physics
  • ArXiv
The memristor is the fundamental nonlinear circuit element, with uses in computing and computer memory. Resistive Random Access Memory (ReRAM) is a resistive switching memory proposed as a non-volatile memory. In this review we shall summarize the state of the art for these closely-related fields, concentrating on titanium dioxide, the well-utilized and archetypal material for both. We shall cover material properties, switching mechanisms and models to demonstrate what ReRAM and memristor… Expand
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