Ti Alloyed α-Ga2O3: Route towards Wide Band Gap Engineering

@article{Barthel2020TiA,
  title={Ti Alloyed $\alpha$-Ga2O3: Route towards Wide Band Gap Engineering},
  author={Armin Barthel and Joseph W. Roberts and Mari Napari and Martin Frentrup and Tahmida N. Huq and Andr{\'a}s Kov{\'a}cs and Rachel A. Oliver and Paul R. Chalker and Timo Sajavaara and Fabien C.-P. Massabuau},
  journal={Micromachines},
  year={2020},
  volume={11}
}
The suitability of Ti as a band gap modifier for α-Ga2O3 was investigated, taking advantage of the isostructural α phases and high band gap difference between Ti2O3 and Ga2O3. Films of (Ti,Ga)2O3 were synthesized by atomic layer deposition on sapphire substrates, and characterized to determine how crystallinity and band gap vary with composition for this alloy. We report the deposition of high quality α-(TixGa1−x)2O3 films with x = 3.7%. For greater compositions the crystalline quality of the… 
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