Threshold voltage reduction in strained-Si/SiGe MOS devices due to a difference in the dielectric constants of Si and Ge

Abstract

We show that a higher value of the dielectric constant in SiGe relative to that in Si causes a reduction in the magnitude of the threshold voltage in strained-Si/SiGe n- and p-MOSFETs. This reduction increases with decreasing thickness of the strained-Si layer. Our results are consistent with the observed mismatch between calculated and measured threshold… (More)

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Cite this paper

@article{Zainuddin2005ThresholdVR, title={Threshold voltage reduction in strained-Si/SiGe MOS devices due to a difference in the dielectric constants of Si and Ge}, author={A.N.M. Zainuddin and Askarul Haque}, journal={IEEE Transactions on Electron Devices}, year={2005}, volume={52}, pages={2812-2814} }