Threshold voltage of thin-film Silicon-on-insulator (SOI) MOSFET's

@article{Lim1983ThresholdVO,
  title={Threshold voltage of thin-film Silicon-on-insulator (SOI) MOSFET's},
  author={Hyung-Kyu Lim and J A Fossum},
  journal={IEEE Transactions on Electron Devices},
  year={1983},
  volume={30},
  pages={1244-1251}
}
The charge coupling between the front and back gates of thin-film silicon-on-insulator (SOI: e.g,, recrystallized Si on SiO2) MOSFET's is analyzed, and closed-form expressions for the threshold voltage under all possible steady-state conditions are derived. The expressions clearly show the dependence of the linear-region channel conductance on the back-gate bias and on the device parameters, including those of the back silicon-insulator interface. The analysis is supported by current-voltage… CONTINUE READING
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