Threshold-alterable Si-gate MOS devices

@article{Chen1977ThresholdalterableSM,
  title={Threshold-alterable Si-gate MOS devices},
  author={P.C.Y. Chen},
  journal={IEEE Transactions on Electron Devices},
  year={1977},
  volume={24},
  pages={584-586}
}
  • P.C.Y. Chen
  • Published 1977
  • Materials Science
  • IEEE Transactions on Electron Devices
  • An electrically threshold-alterable n-channel MOS device with polysilicon gate is experimentally realized by employing a polysilicon-oxynitride-nitride-oxide-silicon (SONOS) structure. Because of several high-temperature processing steps after the nitride deposition, it was found necessary to increase the thin-oxide thickness of the SONOS devices in order to achieve better charge retentivity. It has been shown that the SONOS device can be used in MOS integrated circuits. Some memory and… CONTINUE READING
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    References

    SHOWING 1-10 OF 10 REFERENCES
    Discharge of MNOS structures
    • 135
    A high-density, read/write, nonvolatile charge-addressed memory
    • J. Fagan, M. White, D. Lampe
    • Computer Science
    • 1976 IEEE International Solid-State Circuits Conference. Digest of Technical Papers
    • 1976
    • 1
    Processing of non - volatile memories
    • J . Electrochem . Soc .
    The drainsource protected MNOS memory device and memorv endurance
    • J . Electrochem Soc .