Threshold Voltage Shift Effect of a-Si:H TFTs Under Bipolar Pulse Bias

@article{Hu2015ThresholdVS,
  title={Threshold Voltage Shift Effect of a-Si:H TFTs Under Bipolar Pulse Bias},
  author={Zhijin Hu and Lisa Ling Wang and Congwei Liao and Limei Zeng and Chang-Yeh Lee and Alan Lien and Shengdong Zhang},
  journal={IEEE Transactions on Electron Devices},
  year={2015},
  volume={62},
  pages={4037-4043}
}
Threshold voltage shift (ΔVTH) effect of hydrogenated amorphous silicon thin-film transistors under bipolar pulse bias stress (BPBS) is investigated. The dependence of the ΔVTH effect on the signal pulsewidth, stress temperature, and negative pulse voltage magnitude of the BPBS is systematically measured, and explained by the charge trapping and detrapping… CONTINUE READING