Three-phase grid inverter with SiC JFETs and Schottky diodes

Abstract

This paper describes design, construction and tests of 2kVA three-phase Current Source Inverter with Silicon Carbide (SiC) JFETs and Schottky diodes. Low on-resistance and switching energies of SiC JFET lead to switching frequency increase to 100kHz. In result size and weight of inverter is reduced. Operation of 2kVA model is illustrated by laboratory… (More)

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Cite this paper

@article{Rabkowski2009ThreephaseGI, title={Three-phase grid inverter with SiC JFETs and Schottky diodes}, author={Jacek Rabkowski and Roman Barlik}, journal={2009 MIXDES-16th International Conference Mixed Design of Integrated Circuits & Systems}, year={2009}, pages={181-184} }