Three-level inverter with 60 A, 4.5 kV Si IGBT/SiC JBS power modules for marine applications

@article{Lentijo2013ThreelevelIW,
  title={Three-level inverter with 60 A, 4.5 kV Si IGBT/SiC JBS power modules for marine applications},
  author={Kathleen Lentijo and Karl D. Hobart},
  journal={2013 IEEE Electric Ship Technologies Symposium (ESTS)},
  year={2013},
  pages={162-165}
}
Semiconductor modules with medium-voltage (MV) Si IGBTs and anti-parallel silicon-carbide (SiC) junction-barrier Schottky (JBS) diodes are of interest in commercial and naval converters as they allow for significantly reduced switching losses and at present are more cost-effective than an all-SiC switch. A three-level converter is being built and tested using custom modules made with 60A (120A pulsed), 4.5kV Si IGBTs and SiC JBS diodes. This work provides a platform to de-risk and evaluate the… CONTINUE READING