Three-dimensional wafer-scale copper chemical-mechanical planarization model

@inproceedings{Thakurta2002ThreedimensionalWC,
  title={Three-dimensional wafer-scale copper chemical-mechanical planarization model},
  author={Dipto G. Thakurta and Donald W. Schwendeman and Ronald J. Gutmann and Sadasivan Shankar and Lei Jiang and William N. Gill},
  year={2002}
}
  • Dipto G. Thakurta, Donald W. Schwendeman, +3 authors William N. Gill
  • Published 2002
  • Materials Science
  • Models based on slurry hydrodynamics, mass transport, and reaction kinetics are developed in order to predict the removal rate of copper on a wafer-scale during chemical–mechanical planarization (CMP). The steps in the copper removal model include: mass transport of the oxidizer to the wafer surface; reaction of oxidizer with copper to form a reacted layer; and subsequent removal of the reacted layer by mechanical abrasion. The rates of the chemical reaction and mechanical abrasion steps are… CONTINUE READING

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