Three-dimensional finite-element thermal simulation of GaN-based HEMTs

  title={Three-dimensional finite-element thermal simulation of GaN-based HEMTs},
  author={F. Bertoluzza and Nicola Delmonte and Roberto Menozzi},
  journal={Microelectronics Reliability},
The aim of this paper is to show and discuss results of three-dimensional finite-element thermal simulation of GaN HEMT structures. HEMTs differing by geometry, substrate material, passivation, and cooling strategy are simulated and compared in order to give a picture of the complex interplay of factors that must be reckoned with for proper thermal modeling and management. 2009 Elsevier Ltd. All rights reserved. 
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On the application of the Kirchhoff transformation to the steady - state thermal analysis of semiconductor devices with temperature - dependent and piecewise inhomogeneous thermal conductivity

  • F Bonani, G Ghione
  • Solid - State Electron
  • 1995

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