Three-dimensional finite-element thermal simulation of GaN-based HEMTs

@article{Bertoluzza2009ThreedimensionalFT,
  title={Three-dimensional finite-element thermal simulation of GaN-based HEMTs},
  author={F. Bertoluzza and Nicola Delmonte and Roberto Menozzi},
  journal={Microelectronics Reliability},
  year={2009},
  volume={49},
  pages={468-473}
}
The aim of this paper is to show and discuss results of three-dimensional finite-element thermal simulation of GaN HEMT structures. HEMTs differing by geometry, substrate material, passivation, and cooling strategy are simulated and compared in order to give a picture of the complex interplay of factors that must be reckoned with for proper thermal modeling and management. 2009 Elsevier Ltd. All rights reserved. 
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