Three-dimensional CMOS IC's Fabricated by using beam recrystallization

  title={Three-dimensional CMOS IC's Fabricated by using beam recrystallization},
  author={Seiichiro Kawamura and Nobuo Sasaki and Taisuke Iwai and Motoo Nakano and Mikio Takagi},
  journal={IEEE Electron Device Letters},
A three-dimensional (3-D) CMOS integrated circuit with a structure, in which one type of transistor is fabricated directly above a transistor of the opposite type with separate gates and an insulator in between, has successfully been fabricated by using laser beam recrystallization. Seven-stage ring oscillators fabricated in the 3-D structure have a propagation delay of 8.2 ns. In the present experiment, a double-layer of silicon-nitride and phospho-silicate-glass (PSG) film has been used as an… 

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    IEEE Electron Device Letters
  • 1982
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