Three-dimensional CMOS IC's Fabricated by using beam recrystallization
@article{Kawamura1983ThreedimensionalCI, title={Three-dimensional CMOS IC's Fabricated by using beam recrystallization}, author={Seiichiro Kawamura and Nobuo Sasaki and Taisuke Iwai and Motoo Nakano and Mikio Takagi}, journal={IEEE Electron Device Letters}, year={1983}, volume={4}, pages={366-368} }
A three-dimensional (3-D) CMOS integrated circuit with a structure, in which one type of transistor is fabricated directly above a transistor of the opposite type with separate gates and an insulator in between, has successfully been fabricated by using laser beam recrystallization. Seven-stage ring oscillators fabricated in the 3-D structure have a propagation delay of 8.2 ns. In the present experiment, a double-layer of silicon-nitride and phospho-silicate-glass (PSG) film has been used as an…
73 Citations
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References
SHOWING 1-7 OF 7 REFERENCES
A CMOS structure using beam-recrystallized polysilicon
- EngineeringIEEE Electron Device Letters
- 1982
A new CMOS structure has been fabricated with the p-channel transistors in a layer of recrystallized polysilicon and the n-channel transistors in adjacent, laterally displaced regions of the…
Vertical single-gate CMOS inverters on laser-processed multilayer substrates
- Engineering1981 International Electron Devices Meeting
- 1981
Joint-gate, vertically stacked CMOS (JCMOS) inverters have been fabricated by a process which utilizes a multilayer substrate consisting of an oxidized n-type silicon wafer upon which are deposited…
ST-CMOS (Stacked Transistors CMOS): A double-poly-NMOS-compatible CMOS technology
- Engineering1981 International Electron Devices Meeting
- 1981
A modified double-poly NMOS technology is proposed, providing CMOS structures. The P-channel transistors are made in the second poly layer. The process scheme is standard, except for the laser…
One-gate-wide CMOS Inverter on laser-recrystallized polysilicon
- EngineeringIEEE Electron Device Letters
- 1980
A CMOS inverter having a single gate for both n and p channel devices has been fabricated using bulk silicon for the p channel device and a laser-recrystallized silicon film for the n channel device.…
Laser‐induced lateral epitaxial growth of silicon over silicon dioxide with locally varied encapsulation
- Materials Science
- 1982
The effect and use of locally varied encapsulation thickness has been demonstrated in cw Ar laser‐ induced lateral epitaxial growth of silicon (Si) layers over silicon dioxide (SiO2) islands. The…
Grain boundaries in p‐n junction diodes fabricated in laser‐recrystallized silicon thin films
- Materials Science
- 1981
Grain boundaries intersecting metallurgical p‐n junctions have been evaluated in laser‐recrystallized silicon thin films. Lateral p‐n junction diodes were fabricated in islands of polycrystalline…
Crystalline silicon on insulators by graphoepitaxy
- Materials Science1979 International Electron Devices Meeting
- 1979
Graphoepitaxy is a new technique that uses artificial surface relief structures to induce crystallographic orientation in thin films. A simple model for graphoepitaxy is presented which predicts that…