Three-dimensional CMOS IC's Fabricated by using beam recrystallization

@article{Kawamura1983ThreedimensionalCI,
  title={Three-dimensional CMOS IC's Fabricated by using beam recrystallization},
  author={S. Kawamura and N. Sasaki and T. Iwai and M. Nakano and M. Takagi},
  journal={IEEE Electron Device Letters},
  year={1983},
  volume={4},
  pages={366-368}
}
  • S. Kawamura, N. Sasaki, +2 authors M. Takagi
  • Published 1983
  • Materials Science
  • IEEE Electron Device Letters
  • A three-dimensional (3-D) CMOS integrated circuit with a structure, in which one type of transistor is fabricated directly above a transistor of the opposite type with separate gates and an insulator in between, has successfully been fabricated by using laser beam recrystallization. Seven-stage ring oscillators fabricated in the 3-D structure have a propagation delay of 8.2 ns. In the present experiment, a double-layer of silicon-nitride and phospho-silicate-glass (PSG) film has been used as an… CONTINUE READING
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