Three-Port Model of a Modern MOS Transistor in Millimeter Wave Band, Considering Distributed Effects

@article{Hasani2016ThreePortMO,
  title={Three-Port Model of a Modern MOS Transistor in Millimeter Wave Band, Considering Distributed Effects},
  author={Javad Yavand Hasani},
  journal={IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems},
  year={2016},
  volume={35},
  pages={1509-1518}
}
Distributed nature of an MOS transistor becomes significant in high frequencies, especially in the millimeter wave band. Two types of distributed effects are encountered in an MOS transistor: the distributed effect along the transistor channel, referred as nonquasi static (NQS) effect, and the distributed effect along the gate finger. We denote the former… CONTINUE READING