Three Fingerprints of Memristor

@article{Adhikari2013ThreeFO,
  title={Three Fingerprints of Memristor},
  author={S. Adhikari and M. Sah and Hyongsuk Kim and L. Chua},
  journal={IEEE Transactions on Circuits and Systems I: Regular Papers},
  year={2013},
  volume={60},
  pages={3008-3021}
}
  • S. Adhikari, M. Sah, +1 author L. Chua
  • Published 2013
  • Mathematics, Computer Science
  • IEEE Transactions on Circuits and Systems I: Regular Papers
This paper illustrates that for a device to be a memristor it should exhibit three characteristic fingerprints: 1) When driven by a bipolar periodic signal the device must exhibit a “pinched hysteresis loop” in the voltage-current plane, assuming the response is periodic. 2) Starting from some critical frequency, the hysteresis lobe area should decrease monotonically as the excitation frequency increases, and 3) the pinched hysteresis loop should shrink to a single-valued function when the… Expand
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How Can the Hysteresis Loop of the Ideal Memristor Be Pinched?
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  • Mathematics, Computer Science
  • IEEE Transactions on Circuits and Systems II: Express Briefs
  • 2014
TLDR
This brief generalizes the present knowledge of the parameters of the pinched hysteresis loop for a periodical zero-dc driving signal described by an odd function of time and concurrently brings new relationships between the parameter versus state map characteristics, the type of the excitation, and thetype of loop pinching. Expand
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References

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Pinched Hysteresis Loops is the Fingerprint of Memristive Devices
This short note clarifies that the "pinched hysteresis loop" fingerprint of a memristor, or a memristive device, must hold for all amplitudes, for all frequencies, and for all initial conditions, ofExpand
Memresistors and non-memristive zero-crossing hysteresis curves
It has been erroneously asserted by the circuit theorist Leon Chua that all zero-crossing pinched hysteresis curves define memristors. This claim has been used by Stan Williams of HPLabs to assertExpand
Resistance switching memories are memristors
TLDR
The goal of this tutorial is to introduce some fundamental circuit-theoretic concepts and properties of the memristor that are relevant to the analysis and design of non-volatile nano memories where binary bits are stored as resistances manifested by the Memristor’s continuum of equilibrium states. Expand
Memristive devices and systems
A broad generalization of memristors--a recently postulated circuit element--to an interesting class of nonlinear dynamical systems called memristive systems is introduced. These systems areExpand
Pinched hysteretic loops of ideal memristors, memcapacitors and meminductors must be 'self-crossing'
Recently, novel findings have been published, according to which some mem-systems excited by harmonic signals can be characterised by the so-called `non-crossing-type pinched hysteretic loops`.Expand
Computation of the Area of Memristor Pinched Hysteresis Loop
TLDR
A novel finding is published in this brief, namely, that the area within the loop is directly related to the value of action potential, which was introduced by Leon Chua in his original work from 1971. Expand
Memristor-The missing circuit element
A new two-terminal circuit element-called the memristorcharacterized by a relationship between the charge q(t)\equiv \int_{-\infty}^{t} i(\tau) d \tau and the flux-linkage \varphi(t)\equiv \int_{-Expand
Memristive diode bridge with LCR filter
The class of nonlinear dynamical systems known as memristive systems was defined by Chua and Kang back in 1976. Since then, many studies have addressed the search for physically-realisable memristiveExpand
The Fourth Element
  • L. Chua
  • Mathematics, Computer Science
  • Proceedings of the IEEE
  • 2012
This tutorial clarifies the axiomatic definition of (v<sup>(α)</sup>; i<sup>(β)</sup>) circuit elements via a lookup table dubbed an A-pad, of admissible (v; i) signals measured via Gedanken probingExpand
Memory effects in complex materials and nanoscale systems
TLDR
The memory properties of various materials and systems which appear most strikingly in their non-trivial, time-dependent resistive, capacitative and inductive characteristics are described within the framework of memristors, memcapacitors and meminductors. Expand
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