Thin phase tailoring of As-Te phase change materials

Abstract

The possibility of usage of Plasma-Enhanced Chemical Vapor Deposition (PECVD) has been demonstrated in terms of its effectiveness for preparation of As-Te chalcogenide films of different chemical and phase composition. The samples were synthesized via direct interaction of arsenic and tellurium vapors into low-temperature non-equilibrium RF (40 MHz) plasma discharge at reduced pressure. Phase and structural evolution of As<inf>x</inf>Te<inf>100&#x2212;x</inf> films, (where x = 31, 35, 38, and 49), based on equilibrium coexistence of two phases (AsTe and As<inf>2</inf>Te<inf>3</inf>) and implemented by gradual change of deposition parameters has been carried out. The variable parameters were as the ratio of the initial substances in the gas phase as the temperature and the electron density in the plasma discharge. The films obtained have been also modified by laser irradiation with the wavelength of 632.8 nm. A possible mechanism of phase modification has been proposed and discussed.

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Cite this paper

@article{Mochalov2017ThinPT, title={Thin phase tailoring of As-Te phase change materials}, author={Leonid Mochalov and Aleksey Nezhdanov and Aleksandr Mashin}, journal={2017 19th International Conference on Transparent Optical Networks (ICTON)}, year={2017}, pages={1-4} }