Thin film bulk acoustic wave filter

  title={Thin film bulk acoustic wave filter},
  author={Markku Ylilammi and J. Ella and Matti Partanen and Jyrki Kaitila},
  journal={IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control},
Thin film bulk acoustic wave (BAW) resonators (FBAR) are fabricated on a silicon nitride bridge using a ZnO piezolayer on a glass substrate and surface micromachining by standard thin film technology. These resonators exhibit a coupling constant k/sub t//sup 2/=7.8% at the first thickness extensional wave mode and are used as impedance elements in a ladder filter in the 1-GHz frequency band of mobile telecommunications. An electrical equivalent circuit is used to characterize the properties of… CONTINUE READING
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