Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor

  title={Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor},
  author={Kenji Nomura and Hiromichi Ohta and Kazushige Ueda and Toshio Kamiya and Masahiro Hirano and Hideo Hosono},
  pages={1269 - 1272}
We report the fabrication of transparent field-effect transistors using a single-crystalline thin-film transparent oxide semiconductor, InGaO3(ZnO)5, as an electron channel and amorphous hafnium oxide as a gate insulator. The device exhibits an on-to-off current ratio of ∼106 and a field-effect mobility of ∼80 square centimeters per volt per second at room temperature, with operation insensitive to visible light irradiation. The result provides a step toward the realization of transparent… 

Instabilities in oxide semiconductor transparent thin film transistors

  • J. F. Conley
  • Physics
    2009 IEEE International Integrated Reliability Workshop Final Report
  • 2009
New amorphous oxide semiconductor transparent thin film transistors (TTFTs) exhibit good mobility (5 to ≫50cm2/V-sec), are transparent, and can be processed at low temperatures. They show great

Transparent-Oxide–Semiconductor Based Top-Gate Self-Alignment Thin-Film Transistors

Top-gate self-aligned transparent-oxide–semiconductor transistors with indium–zinc-oxide as a semiconductor have been studied. During transistor fabrication, successive sputtering of oxide

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We have fabricated fully transparent Al-doped ZnO thin-film transistors (AZO TFTs) on a flexible plastic substrate at room temperature. A double-stacked channel structure composed of a high-density

Review paper: Transparent amorphous oxide semiconductor thin film transistor

Thin film transistors (TFTs) with oxide semiconductors have drawn great attention in the last few years, especially for large area electronic applications, such as high resolution active matrix

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  • Y. SunT. MaemotoS. Sasa
  • Materials Science
    2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)
  • 2014
We report the fabrication and characterization of fully transparent zinc oxide (ZnO) thin-film transistors (TFTs) by using low resistivity transparent conducting Al-doped ZnO (AZO) thin-films. The

High-mobility transparent thin-film transistors with an Sb-doped SnO2 nanocrystal channel fabricated at room temperature

These achievements demonstrate that SnO2-based nanocrystal thin-film transistors are promising for high-speed transparent and flexible electronics on temperature-sensitive substrates.

Transparent thin-film transistor with self-assembled nanocrystals

The paper presents the fabrication of transparent devices using nanofabrication and nanomaterials. Clear and functional structures can be constructed over a large area with highly transparent



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Highly transparent ZnO-based thin-film transistors (TFTs) are fabricated with optical transmission (including substrate) of ∼75% in the visible portion of the electromagnetic spectrum.

Depletion-type thin-film transistors with a ferroelectric insulator

We present a study of electrical characteristics of ferroelectric field-effect transistors made of PbZr0.2Ti0.8O3 and SnO2:Sb thin films. Due to properly chosen semiconductor parameters, the

Fabrication of transparent p-n heterojunction thin film diodes based entirely on oxide semiconductors

All oxide-based, transparent polycrystalline p–n heterojunctions on a glass substrate were fabricated. The structure of the diode was n+-ZnO electrode/n-ZnO/p-SrCu2O2/In2−xSnxO3 electrode on the

A ferroelectric transparent thin‐film transistor

Operation is demonstrated of a field‐effect transistor made of transparant oxidic thin films, showing an intrinsic memory function due to the usage of a ferroelectric insulator. The device consists

Current injection emission from a transparent p-n junction composed of p-SrCu~2O~2/n-ZnO

An ultraviolet light-emitting diode (LED) operating at room temperature was realized using a p–n heterojunction composed of transparent conductive oxides, p-SrCu2O2 and n-ZnO using conventional photolithography with the aid of reactive ion etching to fabricate the LED device.

Heteroepitaxial growth of a wide-gap p-type semiconductor, LaCuOS

High-quality epitaxial films of LaCuOS, a wide-gap p-type semiconductor, are grown on yittria-stabilized-zirconia (001) or MgO (001) single-crystal substrates by a unique method. Postannealing of a

Amorphous transparent conductive oxide InGaO3(ZnO)m (m≤ 4): a Zn4s conductor

Abstract With the purpose of creating ZnO-based amorphous transparent conductors, a range of amorphous films InGaoO3(ZnO)m (where m ≤ 4) was prepared using a pulsed-laser deposition method. The

Improved dc characteristics of AlGaN/GaN high-electron-mobility transistors on AlN/sapphire templates

High-electron-mobility transistors (HEMTs) have been demonstrated on both AlN/sapphire templates and sapphire substrates, and the dc characteristics of the fabricated devices were examined at room