Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor

  title={Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor},
  author={Kenji Nomura and Hiromichi Ohta and Kazushige Ueda and Toshio Kamiya and Masahiro Hirano and Hideo Hosono},
  pages={1269 - 1272}
We report the fabrication of transparent field-effect transistors using a single-crystalline thin-film transparent oxide semiconductor, InGaO3(ZnO)5, as an electron channel and amorphous hafnium oxide as a gate insulator. The device exhibits an on-to-off current ratio of ∼106 and a field-effect mobility of ∼80 square centimeters per volt per second at room temperature, with operation insensitive to visible light irradiation. The result provides a step toward the realization of transparent… Expand
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