Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor
@article{Nomura2003ThinFilmTF,
title={Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor},
author={Kenji Nomura and Hiromichi Ohta and Kazushige Ueda and Toshio Kamiya and Masahiro Hirano and Hideo Hosono},
journal={Science},
year={2003},
volume={300},
pages={1269 - 1272}
}We report the fabrication of transparent field-effect transistors using a single-crystalline thin-film transparent oxide semiconductor, InGaO3(ZnO)5, as an electron channel and amorphous hafnium oxide as a gate insulator. The device exhibits an on-to-off current ratio of ∼106 and a field-effect mobility of ∼80 square centimeters per volt per second at room temperature, with operation insensitive to visible light irradiation. The result provides a step toward the realization of transparent…
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References
SHOWING 1-10 OF 13 REFERENCES
ZnO-based transparent thin-film transistors
- Materials Science
- 2003
Highly transparent ZnO-based thin-film transistors (TFTs) are fabricated with optical transmission (including substrate) of ∼75% in the visible portion of the electromagnetic spectrum.…
Depletion-type thin-film transistors with a ferroelectric insulator
- Physics
- 1997
We present a study of electrical characteristics of ferroelectric field-effect transistors made of PbZr0.2Ti0.8O3 and SnO2:Sb thin films. Due to properly chosen semiconductor parameters, the…
Fabrication of transparent p-n heterojunction thin film diodes based entirely on oxide semiconductors
- Materials Science
- 1999
All oxide-based, transparent polycrystalline p–n heterojunctions on a glass substrate were fabricated. The structure of the diode was n+-ZnO electrode/n-ZnO/p-SrCu2O2/In2−xSnxO3 electrode on the…
A ferroelectric transparent thin‐film transistor
- Physics
- 1996
Operation is demonstrated of a field‐effect transistor made of transparant oxidic thin films, showing an intrinsic memory function due to the usage of a ferroelectric insulator. The device consists…
Current injection emission from a transparent p-n junction composed of p-SrCu~2O~2/n-ZnO
- Physics
- 2000
An ultraviolet light-emitting diode (LED) operating at room temperature was realized using a p–n heterojunction composed of transparent conductive oxides, p-SrCu2O2 and n-ZnO using conventional photolithography with the aid of reactive ion etching to fabricate the LED device.
Heteroepitaxial growth of a wide-gap p-type semiconductor, LaCuOS
- Materials Science, Physics
- 2002
High-quality epitaxial films of LaCuOS, a wide-gap p-type semiconductor, are grown on yittria-stabilized-zirconia (001) or MgO (001) single-crystal substrates by a unique method. Postannealing of a…
Amorphous transparent conductive oxide InGaO3(ZnO)m (m≤ 4): a Zn4s conductor
- Materials Science, Physics
- 2001
Abstract With the purpose of creating ZnO-based amorphous transparent conductors, a range of amorphous films InGaoO3(ZnO)m (where m ≤ 4) was prepared using a pulsed-laser deposition method. The…
Novel film growth technique of single crystalline In2O3(ZnO)m (m= integer) homologous compound
- Materials Science
- 2002
Improved dc characteristics of AlGaN/GaN high-electron-mobility transistors on AlN/sapphire templates
- Materials Science
- 2002
High-electron-mobility transistors (HEMTs) have been demonstrated on both AlN/sapphire templates and sapphire substrates, and the dc characteristics of the fabricated devices were examined at room…