Thickness Dependence of Hole Mobility in Ultrathin SiGe-Channel p-MOSFETs

@article{Chleirigh2008ThicknessDO,
  title={Thickness Dependence of Hole Mobility in Ultrathin SiGe-Channel p-MOSFETs},
  author={C. N. Chleirigh and N. D. Theodore and Hiroyuki Fukuyama and Simon Mure and H Ehrke and A. Domenicucci and J P Hoyt},
  journal={IEEE Transactions on Electron Devices},
  year={2008},
  volume={55},
  pages={2687-2694}
}
A fundamental understanding of the mechanisms responsible for the dependence of hole mobility on SiGe channel layer thickness is presented for channel thicknesses down to 1.8 nm. This understanding is critical to the design of strained SiGe p-MOSFETs, as lattice mismatch limits the thickness of SiGe that can be grown on Si and as Ge outdiffusion during processing reduces the Ge fraction. Temperature-dependent measurements are used to extract the phonon-limited mobility as a function of SiGe… CONTINUE READING
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